Copper Thin Films

Hot sale six nines high purity copper thin films at the cheap price 1.Simple introduction for copper thin films Thin copper films have been grown in a vertical MOCVD (Metal-Organic Chemical Vapor Deposition) reactor using bis(2,2,6,6-tetramethyl-3,5-heptanedionato) copper(II), Cu(thd) 2 , as...

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Hot sale six nines high purity copper thin films at the cheap price

1.Simple introduction for copper thin films

Thin copper films have been grown in a vertical MOCVD (Metal-Organic Chemical Vapor Deposition) reactor using bis(2,2,6,6-tetramethyl-3,5-heptanedionato) copper(II), Cu(thd) 2 , as precursor. Deposition has been carried out in a pure hydrogen atmosphere (pressure: 3, 20 mbar) at different substrate temperatures (350–750 ° C). The films have been investigated by profilometry, four-point resistivity measurements, ESCA, AES, XRD, AFM, and Normarsky microscopy. An unusual dependence of the film thickness with deposition time has been observed. Rapid growth occurred in the first minutes resulting in badly conducting films (thickness below 1000 03). Good electrical resistivities have been obtained above 2000 03. AFM has been used to gain information about the surface morphology of the films with different thicknesses. The grain size and surface roughness increased with increasing film thickness. Small grains grew in the beginning and the electrical properties have been governed by the highly Ohmic bridges between the individual grains.

2.Analysis for our high purity copper thin films

Tested Elements (mg/Kg)

Analysis results

Tested Elements(mg/Kg)

Analysis results

Tested Elements(mg/Kg)

Analysis results

Li

<0.005

Ga

<0.005

Nd

<0.005

Be

<0.005

Ge

<0.005

Sm

<0.005

B

<0.005

As

0.033

Eu

<0.005

C

-

Se

<0.005

Gd

<0.005

N

-

Br

<0.005

Tb

<0.005

O

-

Rb

<0.005

Dy

<0.005

F

<0.005

Sr

<0.005

Ho

<0.005

Na

0.016

Y

<0.005

Er

<0.005

Mg

<0.005

Zr

<0.005

Tm

<0.005

Al

<0.005

Nb

<0.005

Yb

<0.005

Si

0.034

Mo

<0.005

Lu

<0.005

P

<0.005

Ru

<0.005

Hf

<0.005

S

<0.05

Rh

<0.05

Ta

<0.005

Cl

<0.05

Pd

<0.005

W

<0.005

K

0.055

Ag

0.015

Re

<0.005

Ca

<0.005

Cd

<0.005

Os

<0.005

Sc

<0.005

In

<0.005

Ir

<0.005

Ti

<0.005

Sn

<0.005

Pt

<0.005

V

<0.005

Sb

<0.005

Au

<0.005

Cr

<0.005

Te

<0.005

Hg

<0.005

Mn

<0.005

I

<0.005

Tl

<0.005

Fe

<0.005

Cs

<0.005

Pb

<0.005

Co

<0.005

Ba

<0.005

Bi

<0.005

Ni

<0.005

La

<0.005

Th

<0.0005

Cu

Basis

Ce

<0.005

U

<0.0005

Zn

<0.005

Pr

<0.005

/

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3.Physial properties and others

Density

8.98g/m3

Melting Point

1083±0.2℃

Thermal Condustivity

0.94Cal/cmse ℃

Thermal Capacity(25℃)

442-446 J/kg K

Electrical Resistivity

1.8-2.0μohm-cm

Young Modulus

130GPa@300K

Coefficient of Thermal Expansion(0-30℃)

16.0-16.2μm/m ℃

Coefficient Of Thermal Expansion(50-100℃)

17.9-18.1μm/m ℃

Blowing current(Times:3s Length:2m)

0.974A

4.Copper thin films application

image001.jpgimage005.jpg
Semiconductor
Thin Film PV
image003.jpgimage007.jpg
Mass StorageCutting Tool


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